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Photonic Crystals Photonic crystals are novel functional structures providing a promising technology platform for realizing compact optical components and advanced functions in integrated photonic circuits, e.g., for waveguides, filters, and tapers in optical communication systems. (KTH)
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Quantum dots Self assembled quantum dots in compound semiconductor materials – these are 80 nm in diameter – enable applications such as highly efficient light sources, parallel computing architectures and single electron transistors (KTH).
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Nanometer sized transistor A silicon transistor with an extremely short – 50 nm – gate for ultra high frequency operation. As shown in the close-up the layer of silica, used to operate the transistor, is only 5 nm thick. This represent only a few atomic layers. This device is developed for next generation of telecommunication systems. (KTH)
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Carbon Nanotube Carbon nano tubes will become a basic building block in the nanoelectronic devices,e.g., in digital transistors for high density integration, single electron devices and spintronics. (KTH) |
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Nano pillars 50 nm wide pillars, proving the possibility to accomplish nano scale devices. (KTH)
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Nano wire A nano-wire, which is a predecessor to future nano-transistors operating at high frequency and low power consumption. In addition this structure has the potential to function as an extremely sensitive detector element for large molecules in, e.g., biomedical samples. (KTH)
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Electron waveguide Electron waveguide devices are explored with the goal to find new solutions for low-power logics and high frequency signal processing. This 80 nm wide Y-branch switch is a model-device developed at the laboratory for e.g. low energy loss computers (KTH).
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Pillar arrays on the submicrometer scale Arrays of pillars can be formed by photo-electrochemical etching of n-type silicon. These pillars are about 400 nm in diameter and 7 µm high. Such arrays can be used as photonic crystals or for microfluidic applications.
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CsI(Tl)-filled pores with vertical pn junctions A pore array with pn junctions in the pore walls and filled with CsI(Tl) can constitute the basic block of a radiation imaging detector. The secondary photons emitted from CsI(Tl) under radiation are detected by the photodiodes fabricated in the pore walls. |