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Silicon Technology

Microsystem Technology

Compound Semiconductor Technology

Nano Fabrication Technology

Compound Semiconductor Technology

– New materials with high potential

We offer our resources within the widely diversified field of compound semiconductors. The art of forming complex device structures by crystal growth techniques has over the years been developed to perfection. We are leaders in the field and offer world class processes for the conventional optoelectronic materials based on gallium arsenide and indium phosphide, in addition to the wide bandgap materials gallium nitride and silicon carbide. Our applications cover the entire range from high speed optoelectronics and electronics to high power and high temperature devices.

	Laser technology A transmission pattern – “eye-diagram” – generated at 10 Gigabit/second from a vertical cavity surface emitting laser, which is the device of choice for gigabit speed data communication over short distances. (KTH)
	Light modulator Ultra high frequency optoelectronic modulator for fiberoptics communication (KTH)
	Spatial light modulator A pixellated light modulator where each pixel element can be controlled individually. This device operates at extremely high frequencies and is used in a wide range of optical communication and signal processing applications (Acreo).
	Infrared photodetector Quantum well infrared photo detector array for use in a commercial IR video camera, which enables extremely high resolution of temperature differences, with for, e.g., surveillance, process control and medical applications. (Acreo)
	Blue light emitting diode Blue light emitting diode adding the missing color to complete the spectrum within reach for light created by electronic devices. Now visible light of any color may be formed by mixing light from different diodes. This device is used in full color displays, and for general lighting with white light. (KTH)
	SiC Bipolar Junction Transistor Silicon carbide is a material with a huge potential for power electronics devices and high temperature electronics. These transistors operate at a temperature of well above 300, and the heat dissipation is monitored by a infrared (IR) camera. (KTH)
	SiC transistors High power SiC microwave transistor. Parallel design allows more than 10 W output at a power density of 2.5 W/mm (AMDS AB).
	SiC RF power transistors The unique properties of SiC allow very high power levels at frequencies up to 10 GHz and above. These devices could be used for mobile telecommunication and they also provide a semiconductor replacement of magnetrons for microwave heating. (Acreo)