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Silicon Technology

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Silicon Technology

–Classic technology renewed

Our expertise to build advanced device structures in silicon – the most widely-used material for electronic devices – is at your disposal. We have refined our process skills to perfection. Furthermore, we can combine silicon with other materials, primarily germanium and carbon, to meet the ever increasing demands on device performance for, e.g., high frequency applications. We have developed highly specialized processes allow for the fabrication of novel devices for integrated optoelectronics on silicon substrates

	MOS gas sensor A set of highly specialized MOS compatible processes - not available at commercial foundries - is maintained at the laboratory. This enables small scale production of components for unique applications. The figure shows a gas sensor chip fabricated in MOS technology. (Produced by Acreo for AppliedSensor, Linköping).
	Si/SiGe bipolar transistor Cross section of a heterojunction bipolar transistor in silicon-germanium technology, featuring a narrow collector, which enables an extremely high frequency operation of above 80 GHz. This device is primarily designed for wireless communication applications. (KTH)
	Si/SiGe transistor Transistor structure where the conventional silicon device is improved by adding a thin silicon-germanium layer in the active region. In this device the high frequency performance is considerably improved, simultaneously as the noise level is reduced. (KTH)
	Integrated Optics Advanced structures for integrated optics, based on a unique technology for controlling the refractive index in optical waveguides is the base for this optical multiplexer / demultiplexer with excellent light distribution profile for incorporation in advanced telecommunication systems. (KTH)