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We offer a world-class facility for growth of crystal structures in the materials systems defined by Gallium-Arsenide, Indium-Phosphide, Gallium-Nitride and Silicon-Carbide., which together with high resolution steppers and laser beam lithography secures extremely accurate control of both vertical and lateral dimensions. In addition we provide a wide range of tools for dry etching with highest precision, together with reliable and flexible processes for plasma deposition of dielectrics, spin-on polymers, metallization, anneal and chip handling. |
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Processes
