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First report on high temperature operation of a fully integrated SiC bipolar opamp

Last Updated Aug 2015
By: Michael Nystås

Researchers at KTH Royal Institute of Technology have demonstrated a monolithic, 500C Operational Amplifier in 4H-SiC Bipolar Technology with a closed loop gain of 40 dB and a 3 dB bandwith of 410 kHz at 500 deg C. This is the first report on high temperature operation of a fully integrated SiC bipolar opamp which demonstrates the feasibility of this technology for high temperature analog integrated circuits.

Hedayati, R. ; Lanni, L. ; Rodriguez, S. ; Malm, B. G. ; Rusu, A. ; and Zetterling, C-M., A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC Bipolar Technology (2014). IEEE Electron Device Letters, Vol. 35, No. 7, 693-695 (2014); DOI: 10.1109/LED.2014.2322335.